mmbt2222alp4 document number: ds35506 rev. 3 - 2 1 of 7 www.diodes.com august 2012 ? diodes incorporated mmbt2222alp4 40v npn small signal surface mount transistor features ? low collector-emitter saturation voltage, v ce(sat) ? ultra-small leadless surface mount package ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: x2-dfn1006-3 ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? nipdau over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.0009 grams (approximate) ordering information (note 4) product marking reel size (inches) tape width (mm) quantity per reel MMBT2222ALP4-7B 2s 7 8 10,000 notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com for more in formation about diodes incorpor ated?s definitions of halogen- and antimony-free, "gree n" and lead-free. ? 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm br omine, <900ppm chlorine (<1500ppm t otal br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com. marking information top view device schematic c e b device symbol c e b bottom view x2-dfn1006-3 2s = product type marking code bar denotes base and emitter side top view e4 2s
mmbt2222alp4 document number: ds35506 rev. 3 - 2 2 of 7 www.diodes.com august 2012 ? diodes incorporated mmbt2222alp4 maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value unit collector-base voltage v cbo 75 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 6 v collector current - continuous i c 600 ma peak collector current i cm 800 ma thermal characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol value unit power dissipation (note 5) p d 460 mw power dissipation (note 6) p d 1 w thermal resistance, junction to ambient (note 5) r ja 272 c/w thermal resistance, junction to ambient (note 6) r ja 120 c/w thermal resistance, junction to lead (note 7) r jl 110 c/w operating and storage temperature range t j , t stg -55 to +150 c esd ratings (note 8) characteristic symbol value unit jedec class electrostatic discharge - human body model esd hbm 8,000 v 3b electrostatic discharge - machine model esd mm 400 v c notes: 5. for a device surface mounted on minimum recommended pad layout fr-4 pcb with single sided 1oz copper, in still air co nditions; the device is measured when operating in a steady-state condition. the entire exposed collector pad is attached to the heatsink. 6. same as note 5, except device is surface mounte d on 25mm x 25mm collector pad heatsink with 1oz copper. 7. thermal resistance from junction to solder-point (at the end of the collector lead). 8. refer to jedec specification jesd22-a114 and jesd22-a115.
mmbt2222alp4 document number: ds35506 rev. 3 - 2 3 of 7 www.diodes.com august 2012 ? diodes incorporated mmbt2222alp4 thermal characteristics 0.000001 0.0001 0.01 1 100 10,000 0.001 0.01 0.1 1 r(t), t r ansien t t h e r mal r esis t an c e t1, pulse duration time (sec) figure 1 transient thermal resistance r (t) = r(t) * r r = 272c/w duty cycle, d = t1/ t2 ? ja ja ja d = 0.5 d = 0.7 d = 0.9 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse 1,000 1e-06 0.0001 0.01 1 100 10,000 100 10 1 0.1 t1, pulse duration time (sec) figure 2 single pulse maximum power dissipation p , p eak t r ansien t p o iwe r (w) (pk) single pulse r = 272c/w r = r * r t - t = p * r ? ja ja(t) (t) ja ja ja(t) 0 50 100 150 200 0 p , p o we r dissi p a t i o n (w) d 0.1 0.2 0.3 0.4 0.5 t , ambient temperature (c) figure 3 power dissipation vs. ambient temperature a r = 272 c/w ja
mmbt2222alp4 document number: ds35506 rev. 3 - 2 4 of 7 www.diodes.com august 2012 ? diodes incorporated mmbt2222alp4 electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics collector-base breakdown voltage bv cbo 75 ? ? v i c = 100 a, i e = 0 collector-emitter breakdown voltage (note 6) bv ceo 40 ? ? v i c = 10ma, i b = 0 emitter-base breakdown voltage bv ebo 6 ? ? v i e = 100 a, i c = 0 collector cutoff current i cex ? 10 na v ce = 60v, v eb ( off ) = 3v collector cutoff current i cbo ? ? 10 na v cb = 60v, i e = 0 ? ? 10 a v cb = 60v, i e = 0, t a = +125c emitter cutoff current i ebo ? ? 10 na v eb = 5v, i c = 0 base cutoff current i bl ? ? 20 na v ce = 60v, v eb ( off ) = 3v on characteristics (note 6) dc current gain h fe 35 ? ? ? v ce = 10v, i c = 0.1ma 50 ? ? ? v ce = 10v, i c = 1ma 75 ? ? ? v ce = 10v, i c = 10ma 35 ? ? ? v ce = 10v, i c = 10ma, t a = -55c 100 ? 300 ? v ce = 10v, i c = 150ma 50 ? ? ? v ce = 1v, i c = 150ma 40 ? ? ? v ce = 10v, i c = 500ma collector-emitter saturation voltage v ce(sat) ? ? ? ? 0.3 1.0 v i c = 150ma, i b = 15ma i c = 500ma, i b = 50ma base-emitter saturation voltage v be(sat) 0.6 ? 1.2 v i c = 150ma, i b = 15ma ? ? 2.0 i c = 500ma, i b = 50ma small signal characteristics (note 6) output capacitance c obo ? ? 8 pf v cb = 10v, f = 1.0mhz, i e = 0 input capacitance c ibo 25 pf v eb = 0.5v, f = 1.0mhz, i c = 0 current gain-bandwidth product f t 300 ? ? mhz v ce = 20v, i c = 20ma, f = 100mhz noise figure nf ? ? 4.0 db v ce = 10v, i c = 100a, r s = 1.0k ? , f = 1.0khz input impedance h ie 0.25 ? 1.25 k ? i c = 10ma, v ce = 10v, f = 1.0khz voltage feedback ratio h re ? ? 4.0 x 10 ? 4 small-signal current gain h fe 75 ? 375 ? output admittance h oe 25 ? 200 s swiching characteristics (note 6) delay time t d ? ? 10 ns v cc = 30v, v be(off) = -0.5v, i c = 150ma, i b1 = 15ma rise time t r ? ? 25 storage time t s ? ? 225 v cc = 30v, i c = 150ma, i b1 = i b2 =15ma fall time t f ? ? 60 notes: 6. measured under pulsed conditions. pulse width 300 s. duty cycle 2%.
mmbt2222alp4 document number: ds35506 rev. 3 - 2 5 of 7 www.diodes.com august 2012 ? diodes incorporated mmbt2222alp4 1 10 1,000 100 0.1 1 10 1,000 100 h, d c c u r r e n t g ai n fe i , collector current (ma) figure 4 typical dc current gain vs. collector current c t = -25c a t = +25c a t = 125c a v = 1.0v ce 1 10 100 1,000 v, c o lle c t o r -emi t t e r saturation voltage (v) ce(sat) i , collector current (ma) figure 5 typical collector-emitter saturation voltage vs. collector current c t = 25c a t = -50c a t = 150c a 0 0.1 0.2 0.3 0.4 0.5 i i c b = 10 1 0.1 10 100 v , base-emi t t e r t u r n- o n v o l t a g e (v) be(on) i , collector current (ma) figure 6 typical base-emitter turn-on voltage vs. collector current c 0.2 0.3 0.4 0.6 0.5 0.8 0.7 1.0 0.9 v = 5v ce t = 25c a t = -50c a t = 150c a capacitance (pf) v , reverse voltage (v) figure 7 typical r capacitance characteristics cibo cobo f = 1mhz 1 10 100 1,000 11 01 0 0 i , collector current (ma) figure 8 typical gain-bandwidth product vs. collector current c f, g ai n -ba n dwid t h p r o d u c t (m h z) t v = 5v ce 0.001 0.01 1 10 0.1 100 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 i , base current (ma) figure 9 typical collector saturation region b v, c o lle c t o r -emi t t e r v o l t a g e (v) ce i = 1ma c i = 10ma c i = 30ma c i = 100ma c i = 300ma c
mmbt2222alp4 document number: ds35506 rev. 3 - 2 6 of 7 www.diodes.com august 2012 ? diodes incorporated mmbt2222alp4 package outline dimensions suggested pad layout x2-dfn1006-3 dim min max typ a ? 0.40 ? a1 0 0.05 0.03 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 d 0.95 1.05 1.00 e 0.55 0.65 0.60 e ? ? 0.35 l1 0.20 0.30 0.25 l2 0.20 0.30 0.25 l3 ? ? 0.40 all dimensions in mm dimensions value (in mm) z 1.1 g1 0.3 g2 0.2 x 0.7 x1 0.25 y 0.4 c 0.7 y c g1 g2 x x 1 z l2 a1 e b2 l1 l3 d e b1 a
mmbt2222alp4 document number: ds35506 rev. 3 - 2 7 of 7 www.diodes.com august 2012 ? diodes incorporated mmbt2222alp4 important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or an y product described herein; neither does di odes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or us er of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support dev ice or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2012, diodes incorporated www.diodes.com
|
